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0810NH APL0953 SP5070MP PN491701 CV7673 B9949CA 14N25 X25323
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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW23/A/B/C
DESCRIPTION *Collector Current -IC= 6A *High DC Current Gain-hFE= 750(Min)@ IC= 2A *Complement to Type BDW24/A/B/C APPLICATIONS *Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C VEBO IC ICM IB
B
VALUE 45 60
UNIT
VCER
Collector-Emitter Voltage
V 80 100 45 60 V 80 100 5 6 8 0.2 50 150 -65~150 V A A A W
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
PC TJ Tstg
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER BDW23 BDW23A IC= 100mA ;IB=0 BDW23B BDW23C VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on)-1 VBE(on)-2 VECF Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage C-E Diode Forward Voltage BDW23 BDW23A BDW23B BDW23C BDW23 BDW23A BDW23B BDW23C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= 2A; IB= 8mA
B
BDW23/A/B/C
CONDITIONS
MIN 45 60
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
V 80 100 2 3 2.5 2.5 3 1.8 V V V V V V
IC= 6A; IB= 60mA
B
IC= 2A; IB= 8mA
B
IC= 1A ; VCE= 3V IC= 6A ; VCE= 3V IF= 2A VCE= 22V; IB= 0
B
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
B
0.5 VCE= 40V; IB= 0
B
mA
VCE= 50V; IB= 0
B
VCB= 45V;IE= 0 VCB= 60V;IE= 0 0.2 VCB= 80V;IE= 0 VCB= 100V;IE= 0 VEB= 5V; IC=0 IC= 1A ; VCE= 3V IC= 2A ; VCE= 3V IC= 6A ; VCE= 3V 1000 750 100 20000 2 mA mA
ICBO
Collector Cutoff Current
isc Websitewww.iscsemi.cn
2


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